LSK389D SOIC 8L ROHS

LSK389 A/B/C/D Ultra-Low Noise Monolithic Dual N-Channel JFET Amplifier INDUSTRY’S FIRST 100% TESTED LOWEST NOISE JFET Absolute Maximum Ratings @ 25 °C (unless otherwise stated) S2 Maximum Temperatures Storage Temperature Junction Operating Temperature D2 -65 to +150°C G2 -55 to +150°C 4 3 6 1 5 G1 D1 2 S1 Maximum Power Dissipation Continuous Power Dissipation @ +25°C TO-71 6L Top View 400mW Maximum Currents Gate Forward Current SOIC 8L Top View IG(F) = 10mA Maximum Voltages Gate to Source VGSS = 40V Gate to Drain VGDS = 40V Features • Ultra-Low Noise: en = 1.3nV/√Hz (typ), f = 1.0kHz and NBW = 1.0Hz • Ultra-Low Noise: 1.5nV/√Hz (typ), f = 10Hz and NBW = 1.0Hz • Tight Matching: IVGS1-2I = 15mV max • High Breakdown Voltage: BVGSS = 40V max • High Gain: Gfs = 20mS (typ) • Low Capacitance: 25pF (typ) • Improved Second Source Replacement for 2SK389 Applications Benefits • Improved System Noise Performance • Unique Monolithic Dual Design Construction of Interleaving Both JFETs on the Same Piece of Silicon • Excellent Matching and Thermal Tracking • Great for Maximizing Battery Operated Applications by Providing a Wide Output Swing • A High Signal to Noise Ratio as a Result of the LSK389's Low and Tightly Matched Gate Threshold Voltages • Audio Amplifiers and Preamps • Discrete Low-Noise Operational Amplifiers • Battery-Operated Audio Preamps • Audio Mixer Consoles • Acoustic Sensors • Sonic Imaging • Instrumentation Amplifiers • Microphones • Sonobouys • Hydrophones • Chemical and Radiation Detectors Description The LSK389 is the industry’s lowest noise Dual N Channel JFET, 100% tested, guaranteed to meet 1/f and broadband noise specifications, while eliminating burst (RTN or popcorn) noise entirely. The LSK389 Series, Monolithic Dual N-Channel JFETs were specifically designed to provide users a better performing, less time consuming and cheaper solution for obtaining tighter IDSS matching, and better thermal tracking, than matching individual JFETs. The LSK389 features four grades of IDSS: 2.6-6.5mA, 6.0-12.0mA, 10.0-20.0mA and 1730mA, with an IDSS match of 10 percen t, a gate threshold offset of 15mV, a voltage noise (en) of 1.3nV/√Hz typical at f = 1.0kHZ, with a Gain of 20mS typical, and 25pF of capacitance typical. The LSK389 provides a wide output swing, and a high signal Doc 201122 04/07/2021 Rev# A25 ECN# LSK389 to noise ratio as a result of the LSK389's tightly matched and low gate threshold voltages. The 40V breakdown provides maximum linear headroom in high transient program content amplifiers. Additionally, the LSK389 provides a low input noise to capacitance product that has nearly zero popcorn noise. The narrow ranges of the IDSS electrical grades combined with the superior matching performance of the LSK389's monolithic dual construction promote ease of device tolerance in low voltage application s, as compared to matching single JFETs. Available in surface mount SOIC 8L and thru-hole TO-71 6L packages. Contact the factory for tighter noise and other specification selections. For equivalent single N-Channel version, please refer to the LSK170 datasheet. www.linearsystems.com Page 1 of 8 LSK389 A/B/C/D Ultra-Low Noise Monolithic Dual N-Channel JFET Amplifier Electrical Characteristics @ 25°C (unless otherwise stated) SYMBOL CHARACTERISTIC MIN TYP MAX UNITS BVGSS Gate to Source Breakdown Voltage -40 --- --- V VDS = 0, ID = -100µA VGS(OFF) Gate to Source Pinch-off Voltage V VDS = 10V, ID = 0.1µA IDSS Drain to Source Saturation Current -0.3 --- -1.6 LSK389A 2.6 --- 6.5 LSK389B 6 --- 12 LSK389C 10 --- 20 LSK389D 17 --- 30 CONDITIONS mA VDS = 10V, VGS = 0 IGSS Gate to Source Leakage Current --- -100 -300 pA VGS = -25V, VDS = 0 IG1G2 Gate to Gate Isolation Current --- ±1.0 ±50 nA VG1-G2 = ±45V, ID = IS = 0A Gfs Full Conduction Transconductance 8 20 --- mS VDS = 10V, VGS = 0, f = 1kHz en Noise Voltage --- 1.3 1.9 nV/√Hz VDS = 10V, ID = 2mA, f = 1kHz, NBW = 1Hz en Noise Voltage --- 1.5 4.0 nV/√Hz VDS = 10V, ID = 2mA, f = 10Hz, NBW = 1Hz CISS Common Source Input Capacitance --- 25 --- pF VDS = 10V, VGS = 0, f = 1MHz, CRSS Common Source Reverse Transfer Cap. --- 5.5 --- pF VDG = 10V, ID = 0, f = 1MHz, Matching Characteristics @ 25°C (unless otherwise stated) SYMBOL CHARACTERISTIC MIN TYP MAX UNITS VGS1 − VGS2 Differential Gate to Source Cutoff Voltage --- 6.0 15 mV CONDITIONS VDS = 10V, ID = 1mA IDSS1 IDSS2 Saturation Drain Current Ratio 0.9 1.0 1.1 n/a VDS = 10V, VGS = 0V Notes 1. Absolute maximum ratings are limiting values above which serviceability may be impaired. 2. Pulse Test: PW ≤ 300µs, Duty Cycle ≤ 3% 3. All characteristics MIN/TYP/MAX numbers are absolute values. Negative values indicate electrical polarity only. Information furnished by Linear Integrated Systems is believed to be accurate and reliable. However, no responsibility is assumed for its use; nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Linear Integrated Systems. Doc 201122 04/07/2021 Rev# A25 ECN# LSK389 www.linearsystems.com Page 2 of 8 LSK389 A/B/C/D Ultra-Low Noise Monolithic Dual N-Channel JFET Amplifier Typical Characteristics LSK389B LSK389A 0.12mA 10,000 1.5mA 10,000 0.4mA 1,000 3.6mA 1,000 0.84mA 9.0mA 100 IG (pA) IG (pA) 1.44mA 2.2mA 3.04mA 10 100 10.3mA 0.20mA 10 0.04mA 1.0 1.0 0.1 4.0 8.0 16.0 12.0 20.0 24.00 0.1 4.0 8.0 20.0 VDS(v) Figure 1. Gate Current (IG) vs. VDS vs. ID Figure 2. Gate Current (IG) vs. VDS vs. ID LSK389C 24.00 LSK389D 10,000 1,000 1,000 100 100 IG (pA) 10,000 IG (pA) 16.0 12.0 VDS(v) 10 10 1 1 0 0 4 8 12 16 20 24 8 12 16 20 24 VDS(V) Figure 4. Gate Current (IG) vs. VDS vs. ID VDS(V) Figure 3. Gate Current (IG) vs. VDS vs. ID Doc 201122 04/07/2021 Rev# A25 ECN# LSK389 4 www.linearsystems.com Page 3 of 8 LSK389 A/B/C/D Ultra-Low Noise Monolithic Dual N-Channel JFET Amplifier Typical Characteristics LSK389B LSK389A 3.04mA 100 150 10.3mA 2.2mA 5.5mA 0.84mA 60 7.7mA 120 1.44mA 0.4mA 0.12mA 0.04mA 40 GOS (µS) GOS (µS) 80 20 90 3.6mA 2mA 60 0.9mA 30 0.0 4.0 8.0 16.0 12.0 20.0 0.0 5.0 24.0 9.0 13.0 17.0 21.0 25.0 VDS(v) VDS(v) Figure 6. Output Conductance - GOS vs. VDS vs. ID Figure 5. Output Conductance - GOS vs. VDS vs. ID LSK389D LSK389C 900 600 800 500 700 600 GOS(uS) GOS(uS) 400 300 500 400 300 200 200 100 100 0 0 4 8 12 16 20 24 VDS(V) Figure 7. Output Conductance - GOS vs. VDS vs. ID Doc 201122 04/07/2021 Rev# A25 ECN# LSK389 www.linearsystems.com 4 8 12 16 20 24 VDS(V) Figure 8. Output Conductance - GOS vs. VDS vs. ID Page 4 of 8 LSK389 A/B/C/D Ultra-Low Noise Monolithic Dual N-Channel JFET Amplifier Typical Characteristics LSK389B LSK389A 0V 4.0 0V 10.0 -0.10V 8.0 3.2 2.4 -0.10V 1.6 ID (mA) ID (mA) -0.05V 6.0 -0.20V 4.0 -0.30V -0.15V 0.8 0.0 -0.20V -0.25V 0.0 15.0 10.0 5.0 20.0 25.00 -0.40V 2.0 -0.50V 0.0 0.0 15.0 10.0 5.0 20.0 25.00 VDS(v) VDS(v) Figure 10. ID vs. VDS vs. VGS Figure 9. ID vs. VDS vs. VGS LSK389D LSK389C LSK389C 25 25 30 0V 0V 25 20 20 -0.2V 1515 ID (mA) ID (mA) ID(mA) -0.2V 1010 -0.4V (mA) IID(mA) D 20 15 -0.4V 10 -0.6V 55 -0.6V 00 0 0 55 10 10 15 15 20 20 -0.8V -1.2V 2525 VDS(V) V (v) Figure 11.11. ID ID vs.DS VDS vs.vs. VGS Figure vs. VDS VGS Figure 11. ID vs. VDS vs. VGS Doc 201122 04/07/2021 Rev# A25 ECN# LSK389 -0.8V 5 -1.0V -1.2V -1.6V 0 0 5 10 15 20 25 VDS(V) VDS(v) Figure 12. ID vs. VDS vs. VGS Figure 12. ID vs. VDS vs. VGS www.linearsystems.com Page 5 of 8 LSK389 A/B/C/D Ultra-Low Noise Monolithic Dual N-Channel JFET Amplifier Typical Characteristics LSK389B LSK389A 2.5 0V 10.0 0V 8.0 2.0 -0.05V -0.10V 6.0 ID (mA) ID (mA) 1.5 1.0 -0.10V 4.0 0.5 -0.15V 2.0 0.0 -0.20V -0.25V 2.0 0.0 1.2 0.8 0.4 1.6 -0.20V -0.30V 0.0 -0.40V -0.50V 0.0 0.8 0.4 1.2 Figure 13. ID vs. VDS vs. VGS VDS(v) Figure 14. ID vs. VDS vs. VGS LSK389C LSK389D VDS(v) 16 1.6 22 0V 2.0 0V 20 14 18 12 -0.2V 8 IID(mA) D(mA) 14 10 (mA) IDID(mA) - 0.2V 16 12 - 0.4V 10 6 8 -0.4V 4 2 - 0.6V -1.2V 0 0.0 0.5 1.0 1.5 VDS(V) Figure 15. ID vs. VDS vs. VGS Doc 201122 04/07/2021 Rev# A25 ECN# LSK389 2.0 www.linearsystems.com - 0.6V 6 4 - 0.8V 2 - 1.0V - 1.2V - 1.6V 0 0.0 0.5 1.0 1.5 VDS(V) Figure 16. ID vs. VDS vs. VGS 2.0 Page 6 of 8 LSK389 A/B/C/D Ultra-Low Noise Monolithic Dual N-Channel JFET Amplifier Typical Characteristics Common Source Forward Transconductance vs. Drain Current LSK389A & B Common Source Forward Transconductance vs. Drain Current LSK389C & D 45 25.0 B 30 GFS(mS) GFS (mS) GFS (mS) C 35 A 20.0 D 40 15.0 25 20 15 10.0 10 5.0 0.0 0.0 5 0 2.0 4.0 6.0 8.0 0 10.0 4 8 ID(mA) Figure 17. GFS vs. ID 12 16 20 ID(mA) Figure 18. GFS vs. ID 24 28 LSK389C & D LSK389A & B 30 10.0 25 8.0 20 ID (mA) ID (mA) 6.0 15 4.0 10 2.0 5 0.0 0.0 -0.4 -0.8 -1.2 VGS(V) -1.6 -2.0 Figure 19. ID vs. VGS Doc 201122 04/07/2021 Rev# A25 ECN# LSK389 www.linearsystems.com 0 -0.4 -0.9 -1.4 VGS(V) Figure 20. ID vs. VGS -1.9 -2.4 Page 7 of 8 LSK389 A/B/C/D Ultra-Low Noise Monolithic Dual N-Channel JFET Amplifier Typical Characteristics Drain Current Transconductance vs. Gate-Source Cutoff Voltage Equivalent Input Noise Voltage vs. Frequency 45 22 20 40 18 35 16 14 30 12 10 25 8 6 20 2.0 en-Noise Voltage (nv/√Hz) gfs @ VDS = 10V, VGS = 0V, f = 1kHz IDSS @ VDS = 10V, VGS = 0V gfs-Forward Transconductance(mS) IDSS-Saturation Drain Current(mA) 24 1.6 1.4 1.2 1.0 0.8 4 -1.1 -1.0 -.90 -.80 -.70 -.60 -.50 -.40 10 100 1,000 Figure 22. f - Frequency (Hz) 10,000 100,000 -1.2 15 2 VDS=10V ID=2mA 1.8 VGS(v) Figure 21. VGS (cutoff) vs. IDss vs. GFS Ordering Information Package Dimensions TO-71 6 Lead Standard Part Call-Out Bottom View Side View LSK389A/B/C or D TO-71 6L RoHS LSK389A/B/C or D SOIC 8L RoHS 4 6 5 Custom Part Call-Out (Custom Parts Include SEL + 4 Digit Numeric Code) DIMENSIONS IN INCHES SOIC 8 Lead 0.049 0.061 Top View S1 D1 SS G1 LSK389A/B/C or D TO-71 6L RoHS SELXXXX Side View LSK389A/B/C or D SOIC 8L RoHS SELXXXX G2 SS DIMENSIONS IN INCHES D2 S2 SS: SUBSTRATE, LEAVE THESE PINS FLOATING (N/C) Doc 201122 04/07/2021 Rev# A25 ECN# LSK389 www.linearsystems.com Page 8 of 8